The mean gestation of the live births was 36.2 weeks with a mean birth weight of 3.0 kg. There were six cases of pre-eclampsia. Twin pregnancies and those entering pregnancy with a creatinine greater than 135 mu mol/l had particularly complicated clinical courses. Four women had not conceived post transplant despite actively trying for over 1 year. Two women utilised assisted fertility methods (in vitro fertilisation), one of whom became pregnant.

Conclusions A significant proportion of women who attempt to conceive following renal transplantation are successful, without the use of assisted fertility. Pregnancy

in this setting warrants meticulous multidisciplinary care.”
“Adding conductive carbon fillers to insulating thermoplastic resins increases composite electrical conductivity. Often, as much of a single type of carbon filler is added to achieve the desired conductivity and still allow the material to be molded Cell Cycle inhibitor into a bipolar plate for a fuel cell. In this study, various amounts of three different carbons

(carbon black, synthetic graphite particles, and carbon nanotubes) were added to polypropylene resin. The resulting single-filler composites were tested for electrical resistivity (1/electrical conductivity). The effects of single fillers and combinations of the different carbon fillers were Studied via a factorial design. The percolation threshold was Thiazovivin 1.4 vol % for the composites containing only carbon black, 2.1 vol % for those containing only carbon nanotubes, and 13 vol %, for those containing only synthetic graphite particles. The factorial results indicate that the composites containing only single fillers (synthetic graphite followed closely by carbon nanotubes and then carbon black) caused a statistically significant decrease in composite electrical resistivity. All of the composites containing combinations of different fillers had a statistically significant effect that increased the electrical resistivity. (C) 2008 Wiley Periodicals, Inc. J Appl Polym Sci 112: 425-433, 2009″
“We present a study of InAs/GaAs quantum dot-in-well (DWELL) material

using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with selleck chemical the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope (TEM) shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.