Figure 2(a) shows the SEM image of the nanowire devices, and Figure 2(b) illustrates the operation mode diagram of the bottom-gate poly-Si nanowire device for ionic solution detection and nitride trap charge storing. Figure 2(c,d) plot the Id-Vg and Id-Vd characteristics of the poly-Si nanowire FETs. scientific assay The device on-off ratio is approximately 105, and the subthreshold swing is 0.5 V/dec. The device threshold voltage was defined by the gate bias at a constant current:Id=10?7��LgW(1)where the drain bias, Vd, is 0.5 V, Lg is nanowire channel length, and W is the nanowire width.Figure 1.(a) Top-View SEM image of the nanowire and CMOS homogenous integration; (b) Cross-sectional schematic diagram of the hybrid technology with CMOS devices and biosensor embedded with memory functionality.Figure 2.
(a) Top-View SEM image of the poly-Si nanowire FETs; (b) Schematic representation of the bottom gate poly-Si nanowire FETs cross-sectioned Inhibitors,Modulators,Libraries Inhibitors,Modulators,Libraries with pH solution; (c) Id-Vd output characteristics of the poly-Si nanowire FET device measured in air; (d) Id-V …3.?Experimental CharacteristicsThe mass manufacture of the semiconductors can simultaneously hold 32 dies in each 6-in. wafer. Figure 3(a) shows the statistics of a comparison among the electrical characteristics of various wire widths without and with the nanowire shrinkage process. The driving current Ion is measured, with a bottom gate of 5 V and a drain bias of 0.5 V, without any fluid on the nanowire surface. After the shrinkage process, the statistical plot shows less variation tailing for the improvement of PR trimming-induced surface roughness.
Because device-to-device variation can be controlled significantly using the shrinkage process, pH sensitivity testing or memory characteristics in this paper are completed for individual nanowire devices, for fair comparison. On the side, the surface adhesion stress Inhibitors,Modulators,Libraries of fluidic cell spatial deflection [19] can also Inhibitors,Modulators,Libraries be aligned for nanowire structure uniformity. Figure 3(b) displays Ionversus time data as phosphate buffer solutions, with pH levels of 5, 7, and 9, which were sequentially delivered onto the nanowire sensors without surface treatment. The nanowire shrinkage split has a high Ion change caused by the large surface-to-volume ratio. The functionality of the poly-Si nanowire sensor can improve Ion accumulation distribution, and further enhance electrical pH sensitivity.
Drug_discovery Thus, the pH sensors of the poly-Si nanowire FETs not only have a higher manufacturing production yield, but also have a greater tolerance for the signal-to-noise ratio [20], for future single-chip system integration of nano-sensors.Figure 3.(a) The current distribution of various wire widths. The nanowire shrinkage technique can effectively improve the surface roughness-induced selleck chemicals variability after PR trimming; (b) Real-time current data with sequential pH testing. The sensors of the nanowire …4.?Results and Discussion4.