(A) HRTEM image showing a single Sb-sprayed InAs QD with the GaAs buffer layer. (B) An IFFT image of (A). (C) IFFT image of InAs QD exhibits (111) planar mismatch and dislocations marked by the T symbols. (D) IFFT image showing the GaAs (111) planes of the wetting layer without any dislocation. There have been reports of InAs and GaSb intermixing with the formation of an In x Ga1 – x As y Sb1 – y alloy in the core of the QDs [31]; however, it was also Selleck Emricasan demonstrated that the Sb atoms

are distributed solely in the As atom matrix of the QDs [20]. While the HRTEM structural imaging can allow us to see atoms at their real locations, and give us detailed information about lattice misfit, defects, and dislocations, we are exploring the feasibility of by atom probe tomography (APT) to identify how the Sb LY2090314 price atoms distribute and interact with other atoms in and around the QDs in order to determine the exact mechanism by which the defect passivation observed in our results are realized. Conclusions HRTEM has been used to study the structural properties of self-assembled InAs/GaAs QDs with and without an Sb spray immediately prior

to GaAs capping. The Sb spray process can reduce the height of the InAs/GaAs QDs and increase the QD density and, more importantly, can passivate Selleckchem Androgen Receptor Antagonist the defects and dislocations in the dot/cap interface region and suppress dislocations to a large extent. This result is very useful for fabricating novel QD-based optoelectronic devices, in particular photovoltaic devices where ensuring a high proportion of QDs that are active is a key requirement for novel energy conversion mechanisms and to reduce losses due to recombination via defects. Acknowledgements The authors are grateful for the scientific and technical support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. This research was supported by the Australian Research Council, the financial support from the National Natural

Science Foundation of China (61204088), the China Scholarship Council, and the natural science funds of China. ZL acknowledges the Australian Research Council for the funding support (DP130104231). References 1. Michler P, Kiraz A, Becher C, Schoenfeld WV, Petroff Bupivacaine PM, Zhang L, Hu E, Imamoglu A: A quantum dot single-photon turnstile device. Science 2000, 290:2282–2285.CrossRef 2. Chan WCW, Nie S: Quantum dot bioconjugates for ultrasensitive nonisotopic detection. Science 1998, 281:2016–2018.CrossRef 3. Kirstaedter N, Schmidt OG, Ledentsov NN, Bimberg D, Ustinov VM, Yu EA, Ustinov VM, Egorov AY, Zhukov AE, Maximov MV, Kop’ev PS, Alferov ZI: Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers. Appl Phys Lett 1996, 69:1226–1228.CrossRef 4. Imamoglu A, Awschalom DD, Burkard G, DiVincenzo DP, Loss D, Sherwin M, Small A: Quantum information processing using quantum dot spins and cavity QED. Phys Rev Lett 1999, 83:4204–4207.CrossRef 5.